Toshiba Debuts One-Gigabit NAND Flash Memory Device

Developed Using MLC Technology, the NAND Chip Pushes the Density Envelope; Doubles Storage Capacity

IRVINE, Calif., Nov. 12 /PRNewswire/ -- Demonstrating its leadership in flash memory technology, Toshiba America Electronic Components, Inc. (TAEC)* with its parent company, Toshiba Corporation (Toshiba) today raised the bar for memory density and lowered cost-per-bit with its 1-gigabit (Gb) multi-level cell (MLC) NAND electrically erasable programmable read-only memory (EEPROM). Co-developed by Toshiba and Sunnyvale, Calif.-based SanDisk Corporation (Nasdaq: SNDK - news), the new device represents an industry benchmark, providing the industry's highest density NAND chip currently available using MLC technology.

Toshiba's 1Gb MLC NAND is manufactured using 0.16-micron (um) technology, the same technology used to produce the 512 megabit (Mb) NAND, and is based on MLC technology which allows two bits of data to be stored in one memory cell, effectively doubling memory capacity. The result is more data storage for less money, making the new device ideal for consumer applications such as digital cameras, cellular telephones and personal digital assistants as well as streaming audio/video equipment, and other emerging markets for flash memory technology. For additional memory, Toshiba plans to produce 2Gb parts in 2002 by stacking two 1Gb dies into a single thin small outline package (TSOP). This can be achieved using the same footprint as existing NAND devices, eliminating design space concerns.

"The Multi-level cell NAND was developed in response to customer demand for high-density solid state storage at a lower cost-per-bit," said Paul Liu, manager of business development for flash memory at TAEC. "By meeting our customers' requirements for higher capacity at a lower cost, we are creating new business opportunities in our existing markets, and paving the way for emerging applications for higher density embedded flash storage and flash memory cards."

"In tackling the design tradeoffs to deliver multi-gigabit memory components, Toshiba has tamed reading and writing to multi-level cell structures, enabling commercial uses," said Richard Doherty, director of research for the Envisioneering Group. "It's the latest example that Toshiba has extensive experience with migrating raw technology capability into commercial memory components which address real world market needs."

Toshiba's 1Gb NAND device will be produced at the company's advanced manufacturing facility at Yokkaichi, Japan and by the FlashVision joint venture established by Toshiba and SanDisk at Toshiba's Dominion Semiconductor manufacturing plant in Manassas, Virginia.

     Technical Specifications for 1Gb NAND Device

     Part Number             TC58010FT
     Configuration           128 megabits x 8 bits
     Power Supply            V(CC) = 2.7 Volts (V) - 3.6 V
     Page Size               528 bytes
     Block Size              (32K + 1024) bytes
     Program Time            1 milliseconds (ms) per page
     Erase Time              2ms per block
     Access Time             50 microseconds (us) first access;
                             50ns serial acces
     Package                 48-pin TSOP Type 1 (12x20x1.2 millimeters)

Pricing and Availability

Sample quantities of Toshiba's 1Gb MLC NAND are available now and are priced at $80 each, with full production scheduled to follow in first quarter of 2002. Samples of Toshiba's two 1Gb stacked die resulting in 2Gb in one TSOP package is scheduled to be available in first quarter of 2002.

NAND Flash Background

Toshiba is a recognized pioneer in flash technology and invented NAND-type flash technology in 1987. NAND flash is becoming the storage media of choice for solid state storage applications because of its high-speed programming capability, high-speed erasing, small block size and low cost. The sequential nature (serial access) of NAND-based flash memory provides notable advantages for these block-oriented data storage applications. Toshiba's NAND flash memory products are optimized for general solid state storage, image file storage and audio for applications such as solid state disk drives, digital cameras, set-top boxes and industrial storage.